Thin-film quantum dot photodiode for monolithic infrared image sensors

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10(-6) A/cm(2) at 2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors

Chapter Interlayer Processing in Active Matrix OLED Displays

Medical genetic

Optimization of charge carrier extraction in colloidal quantum dots short-wave infrared photodiodes through optical engineering

Colloidal quantum dots (QDs) have attracted scientific interest for infrared (IR) optoelectronic devices due to their bandgap tunability and the ease of fabrication on arbitrary substrates. In this work, short-wave IR photodetectors based on lead sulfide (PbS) QDs with high detectivity and low dark current is demonstrated. Using a combination of time-resolved photoluminescence, carrier transport, and capacitance-voltage measurements, it is proved that the charge carrier diffusion length in the QD layer is negligible such that only photogenerated charges in the space charge region can be collected. To maximize the carrier extraction, an optical model for PbS QD-based photodiodes is developed, and through optical engineering, the cavity at the wavelength of choice is optimized. This universal optimization recipe is applied to detectors sensitive to wavelengths above 1.4 mu m, leading to external quantum efficiency of 30% and specific detectivity (D*) in the range of 10(12) Jones

Energy Level Tuning of Non-fullerene Acceptors in Organic Solar Cells

This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in Journal of the American Chemical Society , copyright © American Chemical Society after peer review. To access the final edited and published work, see http://pubs.acs.org/doi/abs/10.1021/jacs.5b02808The use of non-fullerene acceptors in organic photovoltaic devices could lead to enhanced efficiencies due to increased open-circuit voltages (VOC) and improved absorption of solar light. Here we systematically investigate planar heterojunction devices comprising peripherally substituted subphthalocyanines as acceptor, and correlate device performance with heterojunction energetics. Due to a balance between VOC and photocurrent, tuning of the interface energy gap is necessary to optimize power conversion efficiency in these devices. In addition, we explore the role of the charge transport layers in the device architecture. It is found that non-fullerene acceptors require adjusted buffer layers with aligned electron transport levels to enable efficient charge extraction, while the insertion of an exciton blocking layer at the anode interface further boosts photocurrent generation. These adjustments result in a planar heterojunction OPV device with 6.9% efficiency and a VOC above 1 V.The research leading to these results has received funding from the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement 287818 of the X10D project and from the European Community’s ERC Advanced Grant # 320680 (EPOS CRYSTALLI). This work is also supported by the Spanish MINECO (CTQ-2014-52869-P) and Comunidad de Madrid (S2013/MIT-2841, FOTOCARBON

Interlayer Processing in Active Matrix OLED Displays

Medical genetic

Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect

Solid-state electron spin qubits, like the nitrogen-vacancy center in diamond, rely on control sequences of population inversion to enhance sensitivity and improve device coherence. But even for this paradigmatic system, the fundamental limits of population inversion and potential impacts on applications like quantum sensing have not been assessed quantitatively. Here, we perform high accuracy simulations beyond the rotating wave approximation, including explicit unitary simulation of neighboring nuclear spins. Using quantum optimal control, we identify analytical pulses for the control of a qubit subspace within the spin-1 ground state and quantify the relationship between pulse complexity, control duration, and fidelity. We find exponentially increasing amplitude and bandwidth requirements with reduced control duration and further quantify the emergence of non-Markovian effects for multipulse sequences using sub-nanosecond population inversion. From this, we determine that the reduced fidelity and non-Markovianity is due to coherent interactions of the electron spin with the nuclear spin environment. Ultimately, we identify a potentially realizable regime of nanosecond control duration for high-fidelity multipulse sequences. These results provide key insights into the fundamental limits of quantum information processing using electron spin defects in diamond.Comment: 9 pages, 5 figure

Integration of highly crystalline C8-BTBT thin-films into simple logic gates and circuits

Highly crystalline organic thin films possess the charge carrier mobilities needed for high-performance, low-cost flexible electronics. However, only few reports exist that show the integration of these films into short-channel organic circuits. This work describes the integration of highly crystalline layers of the thermally and chemically fragile small molecule C8-BTBT. Thin films of this material are processed by a combination of zone-casting and homoepitaxial vacuum evaporation and display an average charge carrier mobility of 7.5 cm2/V in long channel transistors. The integration of these films into a circuit technology based on a 5 μm channel-length bottom-gate bottom-contact transistor topology results in inverters with gains up to 40 as well as a robust 19-stage ring oscillator. This circuit requires the simultaneous operation of 80 TFTs and displays a stage delay of 40 μs, resulting in an operating frequency of 630 Hz at an operating voltage of 10 V. With the help of circuit modelling, we quantify the relationship between the speed of ring oscillators and the contact resistance of individual transistors. Indeed, the successful integration of highly-crystalline layers with high intrinsic mobility stresses the need for advances in contact engineering